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New Research Progress of New GeSe Inorganic Thin Film Solar Cell in Chinese Academy of Sciences

Time: 2019-05-10 View: 2093

Inorganic thin film solar cells have attracted considerable attention because of their potential to achieve high energy conversion efficiency while reducing costs. At present, commercialized CdTe and CuIneium gallium selenide (CIGS) thin film solar cell photoelectric conversion efficiency has exceeded 21%, showing a strong market competitiveness. However, Te, In resources are scarce, and bottlenecks occur when battery power is up to megawatts. At the same time Cd is highly toxic elements, increasing the difficulty of production and use maintenance. Therefore, looking for green non-toxic, rich reserves, photoelectric performance of the new thin film solar cells imminent.


In the Chinese Academy of Sciences strategic pilot technology and the National Natural Science Foundation of the support of the Chinese Academy of Sciences Institute of Molecular Nanostructures and Nanotechnology key laboratory researcher Hu Jinsong research group dedicated to the new solar cell materials and devices research The preliminary work includes the development of green non-toxic and abundant FeS2 materials. The pure cubic cubic FeS2 nanomaterials are prepared based on the solvent-induced method to prepare a solid foundation for further thin-film solar cells (J .Am.Chem.Soc.2015,137,2211).


Recently, the researchers have made new progress in the research of another binary compound, germanium selenide (GeSe) thin film solar cell. (1414V), the absorption coefficient is large (> 104cm-1), the mobility is high (128cm2V-1s-1), is very suitable for the production of new thin film solar cells, the theory of photoelectric Conversion efficiency of up to 30% or more. In order to solve the problem of Ge and GeSe2 heterogeneous phases in the preparation of GeSe, the researchers developed a rapid sublimation film preparation method (RTS) with self-regulating function based on the sublimation of GeSe. The high-quality pure phase GeSe polycrystalline thin film was fabricated and used as an absorptive layer to construct a GeSe thin-film solar cell with a top-lining structure. The photoelectric conversion efficiency was achieved by 1.48% for the first time. At the same time, the prepared GeSe thin-film battery device in the un-encapsulated conditions, the air placed nearly two months of performance without any attenuation, showing good device stability (Figure). In addition, through the sublimation mechanism of GeSe, it is found that GeSe (s) is sublimated by forming the diatomic molecule GeSe (g), which greatly reduces the defects such as the intervening position and the meta position. Therefore, the RTS process can obtain defective GeSe film. The above experimental results fully demonstrate the prospect of GeSe materials in the application of thin-film solar cells, published in the Journal of the American Chemical Society (J. Am. Chem. Soc. 2017, 139, 958). After the article on the line caused a concern of the domestic counterparts, "Journal of Physical Chemistry" in the "highlights" special report of the work (ActaPhys.-ChimSin.2017,33,264) and gave a high evaluation, that GeSe is a great potential for solar cells Absorption layer material, which is expected to become a new photovoltaic research hotspot.






(C) GeSe thin film solar cell device schematic diagram; (d) GeSe thin film solar cell J-V test curve. (A) GeSe and heterogeneous Ge, GeSe2 saturated vapor pressure curve; (b) rapid sublimation film preparation process diagram;
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